# Agentic TCAD Calibration Workflow for Oxide Semiconductor Transistors

arXiv: https://arxiv.org/abs/2609.12184 · HTML: https://mlsanity.com/paper/2609.12184/

## Key facts

- No citing papers in the map yet (data through 14 Oct 2026).
- Builds on 4 of its 14 references that are in the map.
- First posted on arXiv 10 Sep 2026.

## Builds on (most cited first, 4 of 4)

- [Retrieval-Augmented Generation for Knowledge-Intensive NLP Tasks](https://mlsanity.com/paper/2005.11401/) (2020)
- [A Survey on Large Language Model based Autonomous Agents](https://mlsanity.com/paper/2308.11432/) (2023)
- [A Derivative-Free Gauss-Newton Method](https://mlsanity.com/paper/1710.11005/) (2017)
- [AgenticTCAD: A LLM-based Multi-Agent Framework for Automated TCAD Code Generation and Device Optimization](https://mlsanity.com/paper/2512.23742/) (2025)

## Abstract (arXiv)

Experimental TCAD calibration is essential for predictive technology modeling of emerging oxide semiconductor transistors. However, it remains time-consuming and expert dependent because of model ambiguity. Multiple physical models and parameter sets can reproduce the same measured transfer characteristics, while local fitting alone cannot uniquely identify the underlying device physics. We present the first demonstration of an agentic TCAD calibration workflow for a fabricated bottom-gate In--W--O (BG-IWO) transistor. Starting from the measured transfer curve and device information, the workflow uses measurement--TCAD residuals and local sensitivity tests to select bounded parameter corrections or evaluate additional physical models, and accept only updates that improve device metrics. The LLM agent orchestrates the workflow, while Sentaurus governs the device physics. For the 2%-W reference device, five agent-suggested updates yield a fixed calibrated model, reducing the multi-metric device objective J by 14.3×. Maximum Vth/Ion errors are 36.1~mV/0.022 decade for varying-drain-bias tests and 46.2~mV/0.062 decade for varying-channel-length tests, demonstrating model transferability across bias and geometry rather than a local parameter fit. W-composition tests provide process-sensitive insight. This agentic workflow provides a faster route to model development for emerging device technologies.