# Design and Performance Analysis of an Ultra-Low Power Integrate-and-Fire Neuron Circuit Using Nanoscale Side-contacted Field Effect Diode Technology

arXiv: https://arxiv.org/abs/2412.12443 · HTML: https://mlsanity.com/paper/2412.12443/

## Key facts

- Cited by 1 papers in the map (data through 14 Oct 2026).
- First posted on arXiv 17 Dec 2024.

## Built on by (most cited first, 1 of 1)

- [Ultra-Low-Power Spiking Neurons in 7 nm FinFET Technology: A Comparative Analysis of Leaky Integrate-and-Fire, Morris-Lecar, and Axon-Hillock Architectures](https://mlsanity.com/paper/2505.03764/) (2025)

## Abstract (arXiv)

Enhancing power efficiency and performance in neuromorphic computing systems is critical for next-generation artificial intelligence applications. We propose the Nanoscale Side-contacted Field Effect Diode (S-FED), a novel solution that significantly lowers power usage and improves circuit speed, facilitating efficient neuron circuit design. Our innovative integrate-and-fire (IF) neuron model demonstrates exceptional performance metrics: 44 nW power consumption (85% lower than current designs), 0.964 fJ energy per spike (36% improvement over state-of-the-art), and 20 MHz spiking frequency. The architecture exhibits robust stability across process-voltage-temperature (PVT) variations, maintaining consistent performance with less than 7% spike amplitude variation for channel lengths from 7.5nm to 15nm, supply voltages from 0.8V to 1.2V, and temperatures from -40degC to 120degC. The model features tunable thresholds from 0.8V to 1.4V and reliable operation across input spike pulse widths from 0.5 ns to 2 ns. This significant advancement in neuromorphic hardware paves the way for more efficient brain-inspired computing systems.