# High-Conductance, Ohmic-like HfZrO4 Ferroelectric Memristor

arXiv: https://arxiv.org/abs/2309.12070 · HTML: https://mlsanity.com/paper/2309.12070/

## Key facts

- Cited by 1 papers in the map (data through 14 Oct 2026).
- First posted on arXiv 21 Sep 2023.

## Built on by (most cited first, 1 of 1)

- [Personalized Spiking Neural Networks with Ferroelectric Synapses for EEG Signal Processing](https://mlsanity.com/paper/2601.00020/) (2025)

## Abstract (arXiv)

The persistent and switchable polarization of ferroelectric materials based on HfO2-based ferroelectric compounds, compatible with large-scale integration, are attractive synaptic elements for neuromorphic computing. To achieve a record current density of 0.01 A/cm2 (at a read voltage of 80 mV) as well as ideal memristive behavior (linear current-voltage relation and analog resistive switching), devices based on an ultra-thin (2.7 nm thick), polycrystalline HfZrO4 ferroelectric layer are fabricated by Atomic Layer Deposition. The use of a semiconducting oxide interlayer (WOx<3) at one of the interfaces, induces an asymmetric energy profile upon ferroelectric polarization reversal and thus the long-term potentiation / depression (conductance increase / decrease) of interest. Moreover, it favors the stable retention of both the low and the high resistive states. Thanks to the low operating voltage (<3.5 V), programming requires less than 10^-12 J for 20 ns long pulses. Remarkably, the memristors show no wake-up or fatigue effect.