# A Three-terminal Non-Volatile Ferroelectric Switch with an Insulator-Metal Transition Channel

arXiv: https://arxiv.org/abs/2108.12091 · HTML: https://mlsanity.com/paper/2108.12091/

## Key facts

- Cited by 1 papers in the map (data through 14 Oct 2026).
- First posted on arXiv 27 Aug 2021.

## Built on by (most cited first, 1 of 1)

- [Lightweight True In-Pixel Encryption with FeFET Enabled Pixel Design for Secure Imaging](https://mlsanity.com/paper/2604.05147/) (2026)

## Abstract (arXiv)

Ferroelectrics offer a promising materials platform to realize energy-efficient non-volatile memory technology with the FeFET-based implementations being one of the most area-efficient ferroelectric memory architectures. However, the FeFET operation entails a fundamental trade-off between the read and the program operations. To overcome this trade-off, we propose in this work, a novel device, Mott-FeFET, that aims to replace the Silicon channel of the FeFET with VO2- a material that exhibits an electrically driven insulator-metal phase transition. The Mott-FeFET design, which demonstrates a (ferroelectric) polarization-dependent threshold voltage, enables the read current distinguishability (i.e., the ratio of current sensed when the Mott-FeFET is in state 1 and 0, respectively) to be independent of the program voltage. This enables the device to be programmed at low voltages without affecting the ability to sense/read the state of the device. Our work provides a pathway to realize low-voltage and energy-efficient non-volatile memory solutions.